FET parameters are temperature dependent, while temperature increases, drain resistance also increases which reduces the drain current. Therefore, FET is more temperature stable.
FET has very high input impedance typically in the range if one to several mega ohms so that FET is preferred in Transistors.
FET is compact so that it is widely used in the integrated circuits.
Noise is very less in FET.
FET has no offset voltage at zero drain current. So FET makes an excellent signal chopper.
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